Formation of cross-cutting structures with different porosity on thick silicon wafers

Silicon-on-Insulator Wafers with Buried Cavities

Optimization of Chemical Texturing of Silicon Wafers Using Different Concentrations of Sodium Hydroxide in Etching Solution

In this paper, the morphology of chemically etched silicon with various concentration  is reported. The surface of Silicon (100) has pyramidal structures which can be used for anti-reflection applications in solar cells. Pyramidal structures can capture incident sun light therefore can enhance the efficiency of silicon solar cells. The structure of silicon pyramid was studied using scanni...

Looking at trace impurities on silicon wafers with synchrotron radiation.

Figure 1. TXRF spectrum of a clean Si wafer surface showing 6.4x10 atoms/cm Fe and 2.6x10 atoms/cm Cu. The Cl is a residue from the HCl solution used to clean the wafer surface and the Ag is a artifact from the particular collimator used in these studies. Other features seen in the spectrum are the Si substrate peak, the scatter peak at 11.2 keV and the escape peak at 9.4 keV. Looking at Trace ...

Contactless Characterization of Silicon Wafers

Contactless measurements are attractive and more commonly used because they do not contaminate the sample and generally do not require sample preparation. After an outline of the more common contactless characterization techniques, I will discuss a few of these in more detail. In particular resistivity or doping density profiling, minority carrier lifetime, stress, temperature, layer thickness,...

Terahertz imaging of silicon wafers

Silicon samples with and without implanted layers have been imaged with a standard time-domain terahertz ~THz! imaging system. The carrier concentration and mobility of the substrate have been extracted from the frequency dependence of the THz transmittance using a simple model based on the Drude approximation. The carrier concentration of implanted layers could be determined simply from the re...